| 摘要 |
PURPOSE:To prevent an IC from mulfunction and to seek a high integration by a method wherein a source (or a drain) of an MOSFET is connected to an input terminal of an IC and a power source voltage is applied to a gate. CONSTITUTION:When a voltage Vth+DELTAVth having a value equal to more than the threshold value of a FET4 is applied to a signal input terminal 1a, a VDD-Vth- DELTAVth appears at the source (or drain) side, because a power source voltage VDD is being applied to a gate, and even when a wiring 1 crosses diffusion layers 2, 3, the layer 2 and the layer 3 do not become conductive. With this constitution, a continuity (or a punch through phenomenon) among each diffusion layer due to a parasitic MOS effect peculiar to an MOSIC can be itgerrupted. Accordingly, a layout of patterns can be performed easily and a chip is reduced in size, thus, a system of high integration and high reliability being obtained. |
