| 摘要 |
<p>BUBBLE DOMAIN STORAGE USING IMPROVED TRANSFER SWITCH A magnetic bubble domain storage device comprising a plurality of storage shift registers and at least one major shift register, which serves to provide bubble domains to the storage register and to receive bubble domains from the storage registers. A novel transfer switch, or gate, is located between each of the storage registers and the major register? which is typically configured in the conventional major/minor loop type of storage organization. This transfer switch can be made using single level masking or multiple level masking and is characterized in that the locus of bubble domain propagation paths through the switch element generally defines the letter "Y". These propagation paths are from one arm of the Y to the other arm, from one arm of the Y to the stem or base portion, or the reverse where a bubble domain travels from the stem (base) of the Y to one of the arms of the Y. In a particular embodiment, the transfer switch is comprised of a Y-shaped magnetic element having a current carrying conductor which crosses the stem portion of the Y-shaped magnetic element. The particular path travelled by bubble domains through the transfer switch is determined by the presence or absence of a current through the conductor. Thus, the transfer switch is characterized by at least one magnetic element having a current path crossing the stem portion of the element(s). The exact shape, width, length, and thickness of the magnetic element, or elements, of the transfer switch can be chosen by the designer in accordance with the propagation structures that are desired. What is important is that the plurality of paths which the bubbles can follow generally define a Y, where the current path through the transfer switch crosses the path which is along the stem portion of the Y defined by the plurality of propagation paths available.</p> |
