| 摘要 |
PURPOSE:To improve an integration and characteristics of a current changing over type logical circuit by a method wherein an insulating layer is installed at an opposed part to a gate and a source of a hand standing operation static induction transistor(SIT) and a thin P layer is laid upon a P layer or an N layer to form a channel. CONSTITUTION:An N embedded layer 9 is formed on a P type Si substrate 47 to make it a source of a hand standing operation SIT and it is used for as a common area of an IC to improve an integration. Subsequent thereto, an SiO2 thin film 15 is selectively installed to grow an epitaxial layer and a P-gate layer 8 is formed on the film 15. Between layers 8, an N type channel 10 is installed to form an n<+> drain and then, it is coated with an SiO2 11 and a poly Si electrode 12, a gate electrode 13 and a protective film 14 are installed as usual. Although the SIT performs a hand standing operation because of its quality, it can easily magnify a current amplification ratio and further, with this constitution, a current component having no relation to the SIT operation flowing in the opposed part to the gate 8 and the source 9 by the mediation of the insulating film 15 is eliminated, and a parasitic capacity is also reduced. Furthermore, if a channel is made a P-layer, it can be turned OFF through a short channel, thus, enabling the characteristics of a current changing over type logical circuit. |
