| 摘要 |
PURPOSE:To obtain a high photoelectric conversion efficiency by setting the first and second electrodes on one surface or one back surface of an Si-substrate via an insulating or semi-insulating film thereby differentiating a work function or a conductive type. CONSTITUTION:An insulating film of Si3N4, SiO2 or the like forms a semiconductive film of a lower nitride or oxide such as Si3N4-X, SiO2-X or the like on a dope or nondope Si-substrate. A positive electrode 12 and a negative electrode 11 are arranged thereon with a certain intervals. The electrode 12 is formed by Pt, Au or P type Si-layer having a large work function, while the electrode 11 is formed by Al, Be or an N type Si-layer having less than 4eV of work function. When the light 8 is irradiated according to this constitution, the generated electrons and positive holes are gathered to the electrodes 11 and 12 respectively within very short diffusion distances. Therefore, since the possibility of recoupling decreases, the photoelectric conversion efficiency increases. |
