| 摘要 |
PURPOSE:To obtain a stable life characteristic by recovering the specific resistance at only a combined portion with an optical fiber surrounding a very small region with a ion-poured high resistant layer, thereby simplifying the step thereof. CONSTITUTION:An n-Ga0.7Al0.3As, P-GaAs, and P-Ga0.7Al0.3 15 are laminated upon an n<+>-GaAs 11 in order. Then, after performing a mask 18, protons are poured thereon to form a high resistant layer 16. After removing the mask, the heat treatment is performed. As a result, the specific resistance of the layer 16 is recovered to that of the layer 15 and the strangulation of the inner current becomes possible. Lastly, the pattern of SiO2 17 and the electrode 19 are formed. According to this constitution, the heat deformation near the luminous portion is decreased and the life characteristic is improved since there exists no conventional depression construction. |
