发明名称 Thermal stress reduction in IC power transistors
摘要 In an integrated circuit class B audio output device the transistors are fabricated as plural parallel connected sections. The two output transistors have their sections interdigitated so that adjacent sections are not turned on simultaneously. This leads to substantial improvements in thermal peaks within the transistors and to reduced thermal gradients across the transistors.
申请公布号 US4276516(A) 申请公布日期 1981.06.30
申请号 US19790061158 申请日期 1979.07.26
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 CONGDON, JAMES S.
分类号 H03F1/30;H03F3/213;(IPC1-7):H03F3/26 主分类号 H03F1/30
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