| 摘要 |
PURPOSE:To form, with a few manhours, a gate electrode of low resistance fine structure whose section is a T-shape and the like, by forming a photosensitive part in a resist film, and vapor-depositing metal for electrode in an aperture obtained by eliminating the above photosensitive part. CONSTITUTION:On a GaAs substrate 1, are grown a GaAs buffer layer 2 and an AlGaAs active layer 3, and thereon, a resist 4 for electron beam is applied. The resist 4 is irradiated by an electron beam through a written pattern, and a first photosensitive part 5 and a second photosensitive part 6 are formed. The above photosensitive parts 5 and 6 are eliminated by developing the resist film 4, and a resist 4a having an aperture part 7 is formed. By using this resist 4a as a mask, a gate recess 8 is formed in an active layer 3. After metal for electrode is vapor-deposited in the above aperture part 7, unnecessary metal on the resist film 4a and the resist 4a are eliminated, and a gate electrode 10 is formed. |
