| 摘要 |
PURPOSE:To obtain a fine pattern with a high accuracy by a method wherein a photoresist film, a metal film and an electronic resist film are piled on a substrate when a desired pattern is formed thereon, and they are radiated with electron beam, developed, exposed and etched. CONSTITUTION:Photoresist film 2 having a thickness of 1-1.5mum, a metalic film 3 made of Al, Cr, Mo, Ti, W or Ta having a thickness of 50-200nm, and an elecron beam resist film 4 having a thickness of 200-600nm are piled in this sequence on the substrate 1 to be processed. Then, electron beams are radiated on the film 4 to inscribe the pattern, the pattern is developed, the produced pattern is applied as a mask, while the film 3 is wet etched or dry etched, then the film 4 is removed. Then, a light is irradiated over an entire surface of the substrate, nonrequired film 3 is removed, the film 2 is developed, only unexposed part of the film 2 positioned below the film 3 is left as the film 5, the base plate 1 is etched with a mask of the unexposed part, then the film 5 is removed. |
