| 摘要 |
PURPOSE:To obtain a pattern having a width of sub-micron beam by a method wherein when a figure having a side shorter than the length of the short side of the maximum rectangular shape of an electron beam is depicted, a longer side of the variable rectangular electron beam is made shorter as a length of the shorter side of the variable rectangular electron beam is reduced. CONSTITUTION:In an electron beam exposure device generating a row of rectangular beams having a long beam size L in X-axis direction, and generating in Y- axis direction a deformed maximum beam size L, a variable rectangular electron beam exposure device is employed as the device, wherein a size of the rectangular shape is varied to reduce a difference in steps of the rectangular connected parts. That is, as a width of Y-axis of the rectangular shape is made shorter than L, a length L of the rectangular shape in X-axis direction is also reduced. In this way, a difference in steps D which is usually formed when these beams are combined with each other is made D/2 to produce a width of sub-micron beam less than 0.5mum and to enable a production of an ultra fine IC component element. |
