| 摘要 |
PURPOSE:To improve the reliability of a semiconductor device by completely removing a conductive material by lifting off after formation of a pattern on the most part of a conductive film with a selective etching. CONSTITUTION:A hole is made in an SiO2 film 102 on an Si substrate 101 to provide a resist 104 with a conductive pattern opposite to intended one. An Al 105 is stacked on the film 102 to provide a resist 106 with the intended pattern. An Al residue 107 which is left at a step in this process is removed simultaneously with the peeling off of the resist 104 and 106. Thus, a desired Al pattern can be obtained. This method enables formation of the desired pattern easily without damage to the substrate, and additionally facilitates the formation of a pattern for multilayer films containing a major conductive material thereby improving the reliability of the device. |
