| 发明名称 |
Merged bipolar/field-effect bistable memory cell |
| 摘要 |
A compact bistable semiconductor memory cell usable in static electronic information storage devices includes a field-effect transistor merged with a bipolar transistor for storing a binary information bit.
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| 申请公布号 |
US4276616(A) |
申请公布日期 |
1981.06.30 |
| 申请号 |
US19790032045 |
申请日期 |
1979.04.23 |
| 申请人 |
FAIRCHILD CAMERA & INSTRUMENT CORP. |
发明人 |
HENNIG, FALKE |
| 分类号 |
G11C11/41;G11C11/40;H01L21/331;H01L21/8229;H01L27/02;H01L27/07;H01L27/102;H01L29/73;H01L29/78;H03K3/021;(IPC1-7):G11C11/40 |
主分类号 |
G11C11/41 |
| 代理机构 |
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代理人 |
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| 地址 |
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