| 摘要 |
PURPOSE:To permit an ion sensor to measure stably for a long time by forming the gate insulating film of an insulated-gate type transistor of specific layers. CONSTITUTION:An electrolyte is allowed to contact directly with a gate insulating film of an insulated-gate type transistor to measure the ion activity in the electrolyte. The gate insulating film has a four-layer structure comprising an silicon oxide layer, a silicon nitride or aluminium oxide layer, an inorganic layer and an organic layer. The contact surface of the inorganic layer with the organic layer has been roughened. The layer having the roughened surface is, for example, a porous inorganic layer or a layer of glass which fuses at a low temperature. |
