| 摘要 |
PURPOSE:To improve ON-OFF characteristics by method wherein a life-time killer such as Au is cover-attached on a region separator of a compound semiconductor element of a bi-lateral thyristor or the like and heat treated in an atmosphere containing phosphrous, and only the region separator is made low in the life time. CONSTITUTION:A PNP structure is formed of a P type layer 12, a P type layer 13 in contrast with that and an N type substrate 11 which become an emitter layer in the first active region and a base layer in the second active region. Then, a heat- oxidized film 14 capable of screening the phosphorus is grown on both sides of the face and the back of the PNP structure, openings 15 and 16 respectively are formed on the surface and the back and the phosphorus is diffused to form the N type emitter regions 17 and 18 respectively. Thus, the PNPN structure is formed in which the two active regions a and b are provided with the region separator c interted therebetween, the Au 31 is attached onto the region c and heat-treated in the atmosphere containing the phosphorus to reduce the life time only of the region c and to prolong the life times of the regions a and b. In such a manner, the withstand dv/dt at the time of commutating is increased. |
