| 摘要 |
PURPOSE:To obtain a semiconductor laser having long lifetime with low oscillation threshold value by forming a multilayer of semiconductor layer by epitaxial growth in a groove formed on a substrate and forming an active region by a selective melt- back process. CONSTITUTION:A groove 15 is formed on the main surface of an N type InP substrate 1, a resist 16 is removed, and N type InP layer 7, N type InGaAsP layer 2, P type InP layer 3 are epitaxially grown. then, it is melt back in In solution containing unsaturated P. The layers 3, and then 2 are dissolved, and while the InGaAsP is dissolving, the Ga density of the In solution is increased, and N type InP is difficult to be dissolved, and the melt back can be stopped at the position designated by a broken line 10. Thereafter, the P type InP layer 8, the P type InGaAsP layer 9 are grown, an insulating film 11, and electrodes 20, 21 are formed, and there can be formed a buried hetero junction type semiconductor laser. |
