| 摘要 |
PURPOSE:To highly integrate a semiconductor device by forming a damage layer in an Si layer grown on the surface of a spinel layer on a substrate, dispersing the crystalline defects occurred in the epitaxially grown layer in the damage layer and thereby forming a high specific resistance Si layer having low defect density. CONSTITUTION:A magnesia spinel layer 5 and an Si high specific resistance layer 6 are formed on an Si wafer 4. Subsequently, the surface of the layer 6 is mirror- polished, and a damage layer 7 for dispersing the crystalline defects in the surface is formed by producing irregularity in the surface and forming a ready escape of the crystalline defects. Thereafter, a high specific resistance Si monocrystalline layer 8 is epitaxially grown on the damage layer 7. Since the crystalline defects 9 produced in the boundary surface between the magnesia spinel 5 and the Si layer 6 and reached the surface of the Si layer 6 is accordingly laterally dispersed in the damage layer 7, the defect density in the Si layer 8 thereon can be reduced, thereby improving the electric characteristics thereof. |
