| 摘要 |
PURPOSE:To prevent the occurrence of variation in the threshold voltage and the noise of the MOS semiconductor device by heat treating a substrate in an inert gas atmosphere containing hydrogen in the state that a wiring metallic coating is not patterned. CONSTITUTION:After predetermined source region 2, drain region 3 and gate oxide film 4, gate electrode 5 are formed on an Si substrate 1, wiring aluminum evaporated film 11 is coated on the entire surface of an Si oxide film 6 having connecting holes for leading out the wires from these regions. The substrate 1 is heat treated in an inert gas atmosphere containing hydrogen. The impurity such as Na<+> ion contained in the Si oxide film on the substrate 1 is deeply intruded into the substrate 1 through the connecting terminals 12, 13 with the substrate through wiring aluminum film evaporated on the entire surface of the oxide film. As a result, it can prevent the occurrence of the variation in the threshold voltage and the noise of the device. |
