发明名称 BONDING GOLD WIRE FOR SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To enhance the mechanical strength of gold wire by containing the first element group of Ag, Ge, Ca, Fe, Mg, the second element group of Ti, Cu, Si, Sn, Bi, Mn, Pb, Ni, Cr and so forth and the third element group of other metals in Au. CONSTITUTION:The first element group of Ag, Ge, Ca, Fe, Mg, the second element group of Ti, Cu, Si, Sn, Bi, Mn, Pb, Ni, Cr, Co, Al, Pd, and the third element group of other metals are contained in a highly pure Au. The Ag of the first group is contained 2-80ppm, Ge is 5-80ppm, Ca is 1-20ppm, Fe is 0.5-10ppm, Mg is 0.5-30ppm in the ranges. Thus, the mechanical strength of the bonding gold metal can be enhanced, thereby increasing the strength after bonding.
申请公布号 JPS5676556(A) 申请公布日期 1981.06.24
申请号 JP19790153995 申请日期 1979.11.28
申请人 发明人
分类号 H01L21/60;C22C5/02;H01L23/49 主分类号 H01L21/60
代理机构 代理人
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