发明名称 MOS FET Amplifier
摘要 A MOS-type FET (field effect transistor) amplifier includes a pair of P-channel and N-channel output stage MOS-type FETs which are ON-OFF controlled by a pulse signal and an inductive load. Each reverse current caused by the inductive load is shunted by a diode connected between the drain and source of each of the MOS-type FETs. An additional pair of diodes are provided in the drain-source circuits of the MOS-type FETs so as to prevent each reverse current flowing through respective substrates of the MOS-type FETs.
申请公布号 US4275359(A) 申请公布日期 1981.06.23
申请号 US19790026587 申请日期 1979.04.04
申请人 SONY CORPORATION 发明人 YOSHIDA, TADAO;SUZUKI, TADAO
分类号 H03F3/217;H03F3/20;H03K5/02;H03K9/08;H03K17/0416;H03K17/567;H03K17/687;(IPC1-7):H03F3/21 主分类号 H03F3/217
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