发明名称 |
MOS FET Amplifier |
摘要 |
A MOS-type FET (field effect transistor) amplifier includes a pair of P-channel and N-channel output stage MOS-type FETs which are ON-OFF controlled by a pulse signal and an inductive load. Each reverse current caused by the inductive load is shunted by a diode connected between the drain and source of each of the MOS-type FETs. An additional pair of diodes are provided in the drain-source circuits of the MOS-type FETs so as to prevent each reverse current flowing through respective substrates of the MOS-type FETs.
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申请公布号 |
US4275359(A) |
申请公布日期 |
1981.06.23 |
申请号 |
US19790026587 |
申请日期 |
1979.04.04 |
申请人 |
SONY CORPORATION |
发明人 |
YOSHIDA, TADAO;SUZUKI, TADAO |
分类号 |
H03F3/217;H03F3/20;H03K5/02;H03K9/08;H03K17/0416;H03K17/567;H03K17/687;(IPC1-7):H03F3/21 |
主分类号 |
H03F3/217 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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