| 摘要 |
PURPOSE:To make a capacity for high frequency grounding useless and increase the use efficiency of a substrate by providing a resistor on GaAs substrate and connecting it between grounding terminals for FET source and tip. CONSTITUTION:GaAs active layer Sub is provided on a semi-insulative GaAs substrate Sub, and an electrode each for drain D, gate G, source S and grounding T is installed across an active layer and a substrate. A resistance layer R is introduced between electrodes S and T. The layer R splits each of the two feet of a conductive pattern of a U-shaped electrode S, so that the composite value of the two resistance layers represents a required resistance for grounding. The layer R shall be thin and short to minimize an inductance to an allowable extent. No connection line is required because of a direct connection to the source, thus reducing an inductance. Under this constitution, a capacity for high frequency grounding is omitted, the use efficiency of a substrate is improved and as a result, a device equipped with a source grounding resistance for self-bias is obtained. |
