| 摘要 |
PURPOSE:To implement a high integrated MOSIC having a good junction, transistor characteristics on the front surface by a method wherein at the rear side of a semiconductor substrate, P is diffused. CONSTITUTION:On the surface of an N type substrate, a P layer 2 is formed and a field oxide film 4 is selectively formed, and at the same time, an oxide film 5 is formed on the rear plane. Next thereto, a source 8 drain 9 and an electrode picking up layer 10 of n channel FET are installed and further, a source 11 drain 12 of an p channel FET and an electrode picking up layer 13 to the substrate 1 are installed. Next, only the surface is coated with an insulating film 14 and a regist 15 is laid thereupon to etch the oxide film 5 at the rear plane. The regist 15 is removed and P is diffused in both the front and the rear plane. At this time, an N<+> layer 16 is formed on the rear plane and Na<+> and a heavy metal are brought in. After PSG of high concentration which is formed during diffusion is removed, a window is opened and an Al wiring 17 is formed. With this constitution, a MOSIC of a good characteristics is obtained. |
