发明名称 SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREOF
摘要 PURPOSE:To prevent cavitation from generating in a brazing filler and bonding surface and to obtain an effective bonding strength and a radiation characteristics by a method wherein a substrate and a pellet are bonded through a metallic porous material having inner pores filled with a brazing filler. CONSTITUTION:A thin metallic porous material 8 having a same dimension as that of a semiconductor pellet 1, a soler foil 9 and a pellet 1 having a Ti-Ni-Ag plating layer 2 at the rear side are laid upon a substrate 3 having a Ni layer 4 on its surface. When the solder 9 is melted by heating from an underneath of the substrate 3, the solder 9 decends filling a void 8a of the porous material 8 with solder 9 by mens of a capillarity and reaches the substrate 3 and the pellet 1 is bonded to the substrate 3. At this time, the air in pores is pushed out sequentially downward and no cavitation is produced, thus, bonding strength and heat radiation efficiency being not lowered utterly.
申请公布号 JPS5674932(A) 申请公布日期 1981.06.20
申请号 JP19790150658 申请日期 1979.11.22
申请人 HITACHI LTD 发明人 SUZUKI HIROMICHI;OKIKAWA SUSUMU
分类号 H01L21/52;H01L21/58 主分类号 H01L21/52
代理机构 代理人
主权项
地址