| 摘要 |
PURPOSE:To make test items at the time of test omissible by extending a metal electrode attached to an opposite conductive-type area upto near a ring-shaped area when an opposite conductive-type area surrounded by a ring-shaped high impurity concentration area of the same conductive-type is provided on a conductive-type semiconductor substrate. CONSTITUTION:In the manufacture of npn transistor, a p type base area 2 is diffused and formed on an n type semiconductor substrate 1 which becomes a collector area. Then, inside the this p type base area, an n type emitter area 3 is provided. On the entire surface, a field SiO2 film 4 is attached with the both ends removed. Inside the exposed substrate 1, an n type annular ring 7 is diffused and formed and on the ring, a guard ring is mounted. The rings 7, 8 constitute a channel stopper. Next, a window is opened in a film 4 as corresponding to an area 2 and an aluminium base electrode 5 adjoining the window is extended and attached on the film 4. At that time, the electrode 5 is further extended in such manner that a void 10 is entirely covered. Thus, a high-reliability device is obtained, while a high- temperature reverse bias test and an action test during the tests are omitted. |
