| 摘要 |
PURPOSE:To reduce a change in the potential of a substrate and resultantly eliminate an adverse effect upon an element by forming a decoupling capacity inside an integrated circuit. CONSTITUTION:In an integrated circuit 1 built in a substrate potential generation circuit 2, a substrate potential fluctuates under the effect of power supply current 1BB running through a substrate. If the 1BB runs by time differential f, the potential change will be represented by the formula DELTAV=1BB.DELTAf/c. Then one electode 3 of the decoupling capacity is connected to the output VBB of the substrate potential generation circuit 2, while the other electrode 3 is earthed or connected to a high voltage current of the integrated circuit. For instance, the decoupling capacity is composed of a capacity C between a polysilicon 4 and a channel 5. Under this constitution, it is possible to reduce a potential change DELTAV in the substrate. |
