| 摘要 |
PURPOSE:To eliminate a boundary layer including a fault and polycrystal by a method wherein a substrate is controlled to conform with a temperature in which a heat diffusion and a chemical reaction are produced and ion of a concentration required for forming an equalized SiO2 or more is injected. CONSTITUTION:When ion is injected into a Si substrate which is retained in 200 deg.C or more, finally, a vicinity of a depth 6 reaches a sufficient concentration to form an equlized SiO2 layer. When ion is injected more, an excessive O2 is diffused by heat to react with a nonreaction Si. When an injection quantity is increased, a distribution of the O2 concentration to the depth direction varies (from 7 to 10). The sharp change of distribution becomes remarkable from an injection quantity 8 which is 1.5 times of the existing method (4.5X10<22>/cm<3>). When the concentration becomes 2 times, an extremely sharp distribution 10 is indicated. As a result thereof, no boundary layer exists utterly between a superficial mono crystal layer 11 and an internal compound layer 12 and the crystalline becomes outstandingly good, and if an IC is formed thereupon, its characteristic is good. And further, the thickness of an insulating layer can be accurately controlled by an injection energy and an injection quantity. |
