| 摘要 |
PURPOSE:To obtain a solar battery of high photoelectric conversion factor on a mass-production scale by using Zn on an N type GaAs substrate as a doughtbunt and growing a P type GaAs layer epitaxially in a liquid phase and then growing an extremely thin P type GaAl layer laminated expitaxially in a gas phase. CONSTITUTION:Inside a solution tank composing a liquid-phase epitaxial growth equipment, Zn and Ga of 10 weight % ratio and polycrystal GaAs are filled. And in a storage part, an N type GaAs substrate 1 is stored. Next, after heating at a prearranged temperat, they are cooled so that a P type GaAs layer 2 may be allowed to grow on the substrate 1. Then a wafer 9 is taken out of the equipment. Later the wafer 9 is housed inside a gas-phase epitaxial growth device hermitically sealed with the contained trimethylgallium, trimethylaluminium and alucine. In this way, an extremely thin (approxi. 500Angstrom ) P type Ga1-xAlxAs(x=0.8-0.9) layer 4 is allowed to grow at a prearranged temperature. Following this procedure, a grating- type electrode 5 is provided in the layer 4 and SiO2 reflection preventive film 7 is used to fill the space between the gratings. On the reverse side of the substrate 1, a laminar electrode 6 is attached. |
