| 摘要 |
PURPOSE:To reduce the stress caused by the nonmatching of lattice by making the lattice constant of a growing layer smaller by 0-0.0005A than the lattice constant of a substrate by adding phosphorus to the growing layer in the case when the growing crystal layer is laminated on the substrate to form the laser element. CONSTITUTION:In the case when the double-heterojunction semiconductor laser of an (A Ga)As/GaAs system is prepared, a small amount of phosphorus is added to the growing layer so as to reduce the stress caused by the strain of nonmatching of the lattice. To be concrete, the phosphorus is added to the 1st and 2nd gate layers and to an active layer held between the former layers so that the lattice constant of the growing layer at the growing temperature turns to be smaller by 0-0.0005A than that of GaAs of the substrate. Thus, the occurrence of misfit dislocation is avoided. |
