| 摘要 |
PURPOSE:To negate the spectrum peculiar to the base substance and clearly separate the spectrum by impurities only, by inserting a specimen which has formed an SiO2 thin film on the semiconductor substrate, and a standard specimen having the same structure, into the optical path of a reference light beam, and measuring the spectrum. CONSTITUTION:When measuring the phosphorous density contained in the phosphorous silicate glass (PSG) formed on the silicon wafer, the transmittivity is measured by making the luminous flux from the light source 1, reflected by the mirrors 2, 2' transmit through the Si wafer which has formed a PSG thin film 4, and the Si wafer 3' which has an SiO2 this film 5 for a reference light beam. According to this constitution, the phosphorous density contained in the PSG thin film can be measured exactly by analysing the spectrum. As for the semiconductor substrate, not only Si, and Ge, but also the semiconductor of III-V group compound such as GaAs, etc. can be used, and also as for the glass thin film, a thin film such as phosphorous silicate glass, arsenic silicate glass, etc. |
