发明名称 |
Overvoltage protection circuit for electronic circuit - has FET preventing destruction due to supply failure or incorrect turn-off |
摘要 |
<p>The protection circuit has a controlled semiconductor connected by its main current path between circuit points prone to be subjected to overvoltages. These points are formed by a point lying at the reference potential of the circuit being protected and by one input (3) of the circuit (5) being protected. The semiconductor's (2) control input (14) is connected to the circuit's (5) supply. The semiconductor may be an n or p channel FET. A resistor (15) is connected between the FET's gate and the reference potential.</p> |
申请公布号 |
DE2950918(A1) |
申请公布日期 |
1981.06.19 |
申请号 |
DE19792950918 |
申请日期 |
1979.12.14 |
申请人 |
SIEMENS AG |
发明人 |
W.,ING. OBERDOERFER,EUGEN |
分类号 |
G01B3/10;H02H3/24;H02H9/04;H03F1/52;(IPC1-7):02H7/20 |
主分类号 |
G01B3/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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