| 摘要 |
PURPOSE:To obtain the microscopic electrode for the subject semiconductor device by a method wherein an aperture is made on the SiO2 film on a semiconductor substrate, whereon a metal layer and a resin layer are laminated, an etching is performed smoothly using an ion milling and the metal layer is left on the aperture section only. CONSTITUTION:The aperture is made on the SiO2 film on a GaAs substrate 1, a Ti-Pu-Au film 3 is coated and a photosensitive resin pattern 4' is formed. Then, using this pattern 4' as a mask, an unnecessary metal 3 is removed by employing the ion milling method, its face is smoothed and the resin filled in the aperture section is left. In this case, the angle of incidence of an ion beam or the speed of etching is adjusted, if necessary, in order to prevent an excessive removal of the resin film on the aperture. Lastly, the remaining resin film is removed and a desired microscopic electrode is obtained. With this constitution, the overlay capacitance is removed and the performance of the extra-high frequency device can be improved sharply. |
