| 摘要 |
PURPOSE:To prevent the heating-up of a substrate, to reduce the etching speed of a resist mask and to stabilize the etching process by a method wherein a plasma is generated intermittently. CONSTITUTION:When a plasma is generated intermittently, the temperature of a substrate is lower than that when it is generated continuously. Also, when the substrate temperature is high, the etching speed increases and a photo resist has a little larger temperature efficiency than Cr. Therefore, when the heating-up of the substrate is prevented by applying a resist mask on a Cr layer and generating the plasma intermittently, the etching speed becomes smaller than that it has been, and a stabilized etching of the Cr film can be performed using the resist mask having a uniform film thickness. |
