| 摘要 |
PURPOSE:To prevent the punch through phenomenon against a thin diffusion layer in a semiconductor integrated circuit device by a method wherein the fourth group metal element is used as the lead out wiring of the diffusion layer. CONSTITUTION:Al of the third group element is used commonly as the lead out wiring of the semiconductor integrated circuit device, but the Al becomes to be an acceptor against Si to form a P diffusion layer, and the Al diffuses in the Si to conduct to the substrate when the N type diffusion layer is shallow. Therefore when the lead out wire is formed with the fourth group metal like Ti, Zr, Hf, etc., because the Si is also the fourth group element, and those elements are hard to act as a doner or an acceptor and are metals having high melting points, so that the punch through phenomenon does not take place even if the diffusion layer is shallow. |
