| 摘要 |
PURPOSE:To form an electrode continuing to the substrate of a seconductor device by a method wherein an epitaxial layer is made to grown on the substrate and is separated like islands, active elements are formed in the respective regions, the metallic electrode is provided on the islandlike region being provided with no active element, and a part of the region is broken by applying an electric pulse. CONSTITUTION:n<+> Type buried regions 21, 31 are formed by diffusion in the p type semiconductor substrate 1, an n<-> type layer 20 is made to grow epitaxially on the whole surface containing the buried regions, grooves entering from the layer 20 into the substrate 1 are cut positioning at the respective both end parts of the regions 21, 31, and p<+> type regions 61-64 are formed respectively by diffusion at the bottom faces. Then these grooves are buried with dielectric layers 51- 54 to make the layer 20 to be islandslike, and active regions are formed respectively in the layer 20 containing the region 21 and in the layer 20 containing the region 31. A p type region 43 is formed by dissusion at a part of the n<-> type islandlike region 42 consisting of the layer 20 being surrounded with the dielectric layers 52, 53 and not containing the buried regions buried in the layer 20 and the metallic electrode 10 is equipped on it. The electric pulse is applied from the electrode to the substrate 1 to break a part of the regions 43, 42, 62 making continuity between the electrode 10 and the substrate 1. |
