| 摘要 |
PURPOSE:To obtain a superior semiconductor thin film on an insulating monocrystalline substrate by a method wherein an impurity is ion implanted to the surface of the insulating monocrystalline substrate, an amorphous film or a polycrystalline film is formed on it and a laser beam, etc., is irradiated to it. CONSTITUTION:A sapphire substrate of about 0.3mm. thickness is abraded, and the smashed layer is removed with phosphoric acid. After B ions are implanted, amorphous Si is piled up with Si evaporated by an electron beam. Irradiating a laser beam from the back face of substrate in a vacuum, a pulse type electron beam is irradiated from the front face of the Si film. The single crystal of Si obtained by this way has the extremely superior characteristic, and the superior characteristic can be obtained when the semiconductor device is formed on this layer. |
