| 摘要 |
A semiconductor laser includes an active layer of a first conductivity type comprising a strip-shaped active region formed by a doping of the second conductivity type over at least a part of the thickness of the active layer. According to the invention, the active region consists of a number of zones of the second conductivity type which are separated by material of the first conductivity type and which, viewed in the longitudinal direction of the active region, have a maximum dimension of at most 20 mu m. Upon ageing, crystal defects in the zones will not expand beyond the zones, thus extending the usable lifetime of the laser. |
