| 摘要 |
PURPOSE:To prevent the generation of potential in the case when releasing a semiconductor substrate to which a plurality of enhancement type transistors are formed by making up a clamp element consisting of a depletion type transistor between a substrate terminal of the substrate and a grounding terminal of a circuit. CONSTITUTION:N<+> type regions 2-8 are diffusion-formed to a P type Si substrate in mutually separating shapes, region 2, 3 sections are used as a transistor Q1 forming a circuit, region 4, 5 sections as a Q3 and region 5, 6 sections as a Q4, and region 7, 8 sections are further employed as a transistor Q5 clamping these transistors. Gate electrodes are each attached to the transistors Q1, Q3, Q4 made up in this manner through gate oxide films, thick oxide films 17-19 for separating elements are made up among the electrodes and the substrate, and a parasitic transistor Q2 is built up under the film 18. A gate electrode 16 of the clamp element Q5 is connected to a substrate terminal 27, and the regions 3, 6 of the elements Q1, Q4 are each connected to a grounding terminal 26. |
