| 摘要 |
PURPOSE:To reduce the number of locating process to shorten the progress of manufacturing work of a semiconductor device by a method wherein when an opening is provided in an insulating film being provided on a semiconductor substrate to form a resistor by diffusion, an opening for the formation of a dielectric of MOS capacitor is provided at the same time. CONSTITUTION:An SiO2 film 20 is adhered on the N type Si substrate 10 and the opening 30 is dug, N type impurity is made to diffuse and an N<+> type region 40 to form one side electrode of the MOS capacitor is formed in the substrate 10. An opening 70 is dug in an SiO2 film 50 generated at this time, and an opening 60 is also formed in the remained film 20. After then a P type impurity is made to diffuse to form a P<-> type resistor 80 in the substrate 10, and at the same time a dielectric film is formed on the surface of the region 40 by the heat treatment at this time without changing dielectric form of the region 40. Then thin SiO2 films 90, 100 are adhered on the regions 80, 40, openings are provided to adhere wiring layers, and the capacitor is constituted of the wiring layer 150, the film 100, the region 40, and the resistor is constituted of the wiring layer 130, the region 80, the wiring layer 130. |
