| 摘要 |
PURPOSE:To obtain an IC having high density and acting at high speed and low power by a method wherein insulating films are put among source and gate regions when the IC is formed using an inverted electrostatic induction transistor as a driver and a bipolar transistor as load. CONSTITUTION:When an IC is formed by a bipolar transistor, load, and an inverted electrostatic induction transistor, a driver, a circuit is formed as follows. That is, an n<-> type layer 12 is grown on an n<+> type semiconductor substrate 11 functioning as a source region in an epitaxial shape, a plurality of grooves are bored to fixed regions, and a surface of the substrate 11 exposed is coated with thin insulating films 18 is SiO2, etc. A plurality of inverted SIT p<+> type gate regions 14 and one p<+> type region 15 functioning as an emitter of a lateral bipolar element are buried in the grooves, and the region 14 near to the region 15 is made double as a collector region of the bipolar element. The n<+> type drain regions 13-1 and 13-2 of SIT are made up in the layers 12 among the regions 14, and electrodes are each attached to the regions. |
