| 摘要 |
PURPOSE:To obtain easily a stepped semiconductor substrate by a method wherein one face of a metal plate is photoetched, a concave part having a prescribed depth is formed at the circumference of a device to be formed remaining the external form of the top part of the device, coining is performed to the concave part to provide the step part and the external form is provided by blanking. CONSTITUTION:The convave part 12 is formed on one face of the metal plate 10 having the same thickness with the sum of the height D+E+F of the respective steps by photoetching to as much as the depth G remaining the top face 11 having the diameter C. The G is slightly shorter than the E+F. Coining is performed to as much as the height F with a punch having a concave of inside diameter C, and the side face of upper step and the upper step and the upper face of the middle step are formed. Then coining is performed to as much as the depth E+F with a punch having a convave of inside diameter B coinciding with the center of the top face 11, and the side face of the middle step and the upper face of the lower step is formed. The E+F becomes deeper than the G. Finally it is blanked with a cylindrical punch having the outside diameter A, and the high precisely stepped semiconductor substrate 1 can be obtained easily. By this way, the radius of curvature formed by the lower step and the side face of the middle step can be made to be small even if the outside diameter of the substrate is 2mm. or less, and a cylindrical cap can be set on satisfactorily. |
