| 摘要 |
PURPOSE:To obtain the desired gate voltage by a method wherein an N layer apart from a cathode layer is formed on a P3 base layer in a thyristor with the four structure of P1N2P3N4, and resistance is entered in series to a gate by utilizing the expansion resistance of a P3 layer under the N layer. CONSTITUTION:A thyristor with the four layer structure of P1N2P3N4 is formed in such a manner that an N2 base layer 2 is made up being buried into a P1 anode layer 1 and a P3 gate layer 3 and an N4 cathode layer 4 are built up in the layer 2. In this constitution, an N type gate electrode contact layer 7 is added apart from the N4 cathode layer 4 and formed to a section contacting with a gate electrode 6 of the P3 gate layer 3. A columnar P type penetration layer 8 is made up over a surface from the bottom of the layer 7, and previously contacted with the electrode 6. Thus, gate voltage is consumed by expansion resistance into the layer 3 just under the layer 7, the gate voltage rises in proportional to the consumption, and even not less than 0.8V voltage is simply obtained. |
