| 摘要 |
PURPOSE:To form the sulfide thin film of a uniform thickness used for electronics, by using the target for sputtering, which is obtained by sulfurizing the surface of the sintered material of the metal oxide system superior in sintering and workability, to perform sulfide sputtering. CONSTITUTION:In production of the sulfide target used to the sulfide thin film, which is used widely in the field of electronics of the electroluminescence element, the photo electromotive force element, the photoconductive element, the piezoelectric element, and so on, by sputtering, sintered material 1 of oxides of Zn, Cd, Pb, Ti, Zr, Fe, and so on is heated at a high temperature in the CS2 atmosphere with N2 gas as the carrier gas. Sulfide sintered material layer 2 of these oxide metals is formed on the surface of oxide sintered material 1. This obtained material is used as the target for sputtering for formation of a sulfide thin film. The mechanical strength is high, and electric discharge is stable, and the sputtering speed is high, and the uniform sulfide thin film is formed. |
