PROCESSO PARA PREPARAR UM TIRISTOR PNPN EM UM CORPO DE SILICIO

摘要

A method for making a pnpn semiconductor reverse conducting thyristor comprises the steps of forming n-type semiconductor layers on both sides of a p-type semiconductor substrate for forming an n-type emitter layer and an n-type anode-base layer. A p-type semiconductor impurity region is formed in the n-type anode-base layer for forming a p-type anode layer. A p+-type semiconductor layer is ion implanted in the p-type substrate adjacent to the n-type cathode emitter layer by irradiating it with boron atoms.