| 摘要 |
PURPOSE:To enhance dry etching characteristic, sensitivity to electron beams, etc., and resolution, by using an s-triazine allyl compound having 3 or more allyl groups mixed with another negative type polymer in fabricating a pattern for a super LSI, etc. CONSTITUTION:An s-triazine allyl compound having 3 or more allyl groups such as hexaallyl melamine is added to a solution of a negative type alkyl vinyl ether- maleic anhydride allyl aduct, etc. having 3,000-200,000 weight average mol.wt. to form a resist fluid, and this fluid is coated on an SiO2 film on a silicon substrate and dried. This is irradiated with electron beams, and developed to form a minute pattern of <=1mum size with high precision and high reproductivity. A high precision super LSI pattern is obtained by using the obtained resist pattern as a mask and CF4 in etching. |
