| 摘要 |
PURPOSE:To remove moisture of the substrate surface completely to improve the quality of the sputtering-formed film, by irradiating the electromagnetic wave of an ultrahigh frequency in the sputtering bath or the preprocessing room adjacent to this bath in case that the thin film is formed onto the substrate surface by the sputtering method. CONSTITUTION:Substrate 3 for formation of a thin film is put on Teflon substrate holder 2 in sputtering bath 1. After air in sputtering bath 1 is evaculated by driving vacuum exhaustion system 11, magnetron oscillator 4 is excited, and the obtained electromagnetic wave of an ultrahigh frequency is led by waveguide 5 and is led into bath 1 through quartz glass plate 6 and is projected onto substrate 3. Water adsorbed to substrate 3 is energized by the electromagnetic wave and is dispersed dielectrically and is exhausted as water molecules from exhaustion system 11. Thus, substrate 3 is dried completely, and the thin film of a superior quality is formed by sputtering. In this case, a preprocessing room may be provided before the sputtering bath to move the substrate and subject it to dehydration and sputtering processings. |
