| 摘要 |
PURPOSE:To improve the S/N by using amorphous magnetic thin film consisting of alloy including rare-earth element and transit metal as the Hall element used for magnetism/electric conversion, and connecting a Hall voltage terminal to it. CONSTITUTION:On a ferromagnetic substance block 10 being the Hall element of a magnetic head, an insulating layer 12 is formed. Further, on it, amorphous magnetic thin film such as GdCo or GdFe is adhered and formed with the method such as vapor deposition or RF sputtering. As the ratio of composition of rare-earth element, used for the thin film 14, a suitable value less than about 40% with atomic concentration is selected. In the magnetic head constituted with such a material, since the magnetic flux phi detected at a gap 28 can efficiently pass through the film 14 because of a shorter magnetic path length, the S/N can remarkably be improved than conventional ones. |
