| 摘要 |
PURPOSE:To seek stabilization of a characteristics by preventing its denaturation and a knock-on effect by a method wherein when an ion injection of high doses is performed, a high melting point metallic film is protected. CONSTITUTION:A field oxide film and a gate oxide film are installed on a P type Si substrate and on the gate oxide film, a Mo gate electrode is selectively formed. Next thereto, in order to form a source and a drain 106, an As ion of 100KeV and 1X10<15>/cm<2> is injected, then, the resist 105 protects a Mo film, as a result, the electrode 104 does not deteriorate, thus, stabilizing the characteristics of a system. |
