| 摘要 |
PURPOSE:To change resistance by controlling threshold voltage with an FET connected in parallel. CONSTITUTION:Voltage is directly applied to a specified FET control gate from outside with the MISFETT1... of a floating gate connected in parallel to change the threshold value thereof. In operation, total resistance is adjusted by substantially turning off the FET. A variable resistor can be obtained using one FET by reducing the charge leak of the gate with the interval between the gate on one hand and a substrate and a control gate on the other increased and can be increased in resistance width by making this semiconductor device into a depletion type. Thereby, a variable resistor device kept stable for a long time can be obtained. |
