TREATMENT FOR SILICON SUBSTRATE

摘要

PURPOSE:To minimize microdefects generating on an epitaxial growth surface by forming mechanical distortion layers on the reverse side of a substrate when an epitaxial layer is grown on the surface of a semiconductor substrate wherein heat treatment is applied in a dry oxide atmosphere at 700-1,000 deg.C. CONSTITUTION:Distortion 4 is intentionally formed on the reverse side of a semiconductor substrate 1 making epitaxial growth by a mechanical means. And heat treatment is applied to the substrate 1 at 700-1,000 deg.C for 10-60hr under a dry oxide atmosphere to generate defective layers 5 in the substrate 1. Next, an SiO2 film on the substrate 1 surface grown with the defective layers 5 is removed and the substrate 1 is housed in an epitaxial growth furnace to grow an epitaxial layer 2 by guiding H2 carrier gas and SiH4 gas. In this way, it is possible to remarkably decrease the density of microdefects 3 generating on the layer 2 surface as low as -2X10<3> pieces/cm<2> by gettering geometric effect with the sink by the distortion 4 and the sink of the defective layers 5 by low temperature oxidation.