| 摘要 |
<p>PURPOSE:To obtain an end surface without mechanical damage by dividing into rectangular devices a semiconductor substrate or a substrate having an epitaxial layer after applying proton to the side walls of the grooves formed on both the right and reverse sides of the substrate. CONSTITUTION:The base material of a laser devide is made through a process consisting of making epitaxial growth of a cladding layer 2, an active layer 3, a cladding layer 4 and an electrode contact layer 5 stacked on a semiconductor substrate 1, depositing an insulating film 6 on the surface of thus-obtained work, making an window therein, depositing an electrode metal 7 and providing an electrode metal 8 on the reverse side of the substrate 1 also. Next, belt-shaped V-goorves 14 equal to a laser oscillator in width are made in the right side 11 of the substrate 1 and similar grooves are provided orthogonally with the grooves 14 in the reverse side 12 of the substrate 1 for dividing the substrate 1 into rectangular devices. Irradiation ranges 15 and 16 are provided on the right and reverse sides by applying proton on one side wall or the both side walls of the grooves to absorb the damage given when a blade is applied for division so that the influence thereof may not extend to the layer 3.</p> |
