发明名称 LIQUIDUS EPITAXIAL DEVICE
摘要 PURPOSE:To obtain high productivity by providing a plurality of semiconductor substrates at certain intervals in a circumferential wall having a through hole for a fusing solution at the upper part wherein a hollow and cylindrical growth tank having a plurality of fusing solution reservoirs is engaged with the circumferential wall and a fusing solution is contacted with the substrates by rotating the tank and by consecutively flowing the solution through the through hole. CONSTITUTION:A through hole 12 for a fusing solution is provided at the upper part of a cylindrical circumferential wall 11a which is horizontally arranged and the hole 12 is opened along a shaft direction. A plurality of semiconductor substrates 5 holding the four sides of the substrates by a belt-shaped substrate retainer 13 at certain intervals are accommodated in the circumferential wall 11a. Next, a cylindrical storage tank 7 for fusing solution is composed of a cylinder consisting of an external circumferential wall 7a and internal circumferential walls 7b and the space bewteen the walls 7a and 7b are partitioned by bulkheads 8 to form separate storage rooms 9a-9f. The internal walls 7b of each room 9a-9f provided with openings 10a-10f corresponding to the above through hole 12 and the internal circumferential walls 7b are engaged with the circumferential wall 11a. Next, the end side of the internal circumferential walls 7b is covered with a cap 15 to fix the circumferential wall 11a and a tank 7 is rotated around the wall 11a to consecutively contact each fusing solution 3a-3f in the storage room with the substrages 5.
申请公布号 JPS5671932(A) 申请公布日期 1981.06.15
申请号 JP19790149081 申请日期 1979.11.15
申请人 MITSUBISHI ELECTRIC CORP 发明人 SOGOU TOSHIO
分类号 C30B19/06;H01L21/208;H01L33/30;H01S5/00 主分类号 C30B19/06
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