| 摘要 |
PURPOSE:To easily obtain a system having no pollution of Na<+>, etc. by a method wherein a source, drain layer is formed by using a gate electrode of a laminated material of a glass film and a high melting point metal as a mask. CONSTITUTION:A field oxide film 2 and a gate oxide film 2G are formed on a P type Si 1 and thereupon, MO3 and CVD-SiO2 4 are laminated and then, a resist mask 5 is applied. A Mo gate electrode 3G is formed through an etching and then, the mask 5 is removed and an ion is injectd to form N<+> layers 6S, 6D. A pollutant on an SiO2 film 4 is removed by lightly performing an etching. Next thereto, a system is coated with a CVD-SiO2 7 after a heat processing in N2, and Al electrodes 8G, 8D, 8S are added. In this way, a glass film 4 is made to remain to trap a pollutant, as a result, the quantity of movable ion in the gate insulating film is sharply reduced, thus, eliminating uneasiness such as an increase of Si-SiO2 interface levels, and a fluctuation of a threshold value voltage due to a voltage applied. |
